Электронная библиотека (репозиторий) Томского государственного университета

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Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
Authors: Pishchagin, Anton A. | Serokhvostov, V. Yu. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
Add   Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015
Add   Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description: Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems ... More
Add   Influence of edge energy on modeling the growth kinetics of quantum dots
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Add   Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Add   Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
Authors: Korotaev, A. G. | Kokhanenko, Andrey P. | Nikiforov, A. I. | Pishchagin, A. A.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 707-708
Type: статьи в сборниках
Date: 2015
Add   Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films
Authors: Romanov, I. V. | Dyagterenko, K. M. | Kopylova, Tatyana N. | Kokhanenko, Andrey P. | Nikonova, E. N. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Add   Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217
Type: статьи в журналах
Date: 2015
Add   Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
Authors: Timofeev, V. A. | Nikiforov, Alexander I. | Mashanov, V. I. | Tuktamyshev, A. R. | Loshkarev, I. D. | Kokhanenko, Andrey P.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
Add   The surface roughening of GaN by wet chemical etching
Authors: Zasukhin, D. I. | Kokhanenko, Andrey P. | Kharapudchenko, Olga V. | Karimbaev, D. D.
Source: Известия высших учебных заведений. Физика. 2015. Т. 58, № 10/3. С. 240-242
Type: статьи в журналах
Date: 2015
Description: Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening t ... More
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Kalin, Eugeniy A. | Nikiforov, Alexander I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 241-242
Type: статьи в журналах
Date: 2013
Add   Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Lozovoy, Kirill A.
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
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