Электронная библиотека (репозиторий) Томского государственного университета
Timofeev, V. A.

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Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description: The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and ... More
Source: Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Type: статьи в журналах
Date: 2018
Description: Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate ... More
Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359
Type: статьи в журналах
Date: 2017
Description: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi ... More
Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103
Type: статьи в журналах
Date: 2015
Description: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan ... More
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
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