Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | 2014

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Add   Background donor concentration in HgCdTe
Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Add   Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
Authors: Dvoretsky, Sergei A. | Mynbaev, Karim D. | Fitsych, Olena I. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Sheregii, E. | Izhnin, Igor I.
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Add   Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Advanced Materials Research. 2014. Vol. 1040. P. 34-38
Type: статьи в журналах
Date: 2014
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014
Add   Light emission from CdHgTe–based nanostructures
Authors: Mynbaev, K. D. | Bazhenov, N. L. | Izhnin, A. I. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Shilyaev, A. V.
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Add   Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2014. Vol. 551. P. 92-97
Type: статьи в журналах
Date: 2014
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