Электронная библиотека (репозиторий) Томского государственного университета
Mynbaev, K. D.

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Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
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