Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | 2016 | Chulkov, Evgueni V.

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Source: Physical Review B. 2016. Vol. 93, № 20. P. 205416-1-205416-21
Type: статьи в журналах
Date: 2016
Description: This is part II in a series of two papers that introduce a general expression for the tracer diffusivity in complex, periodic energy landscapes with M distinct hop rates in one-, two-, and three-dimen ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description: Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description: Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 21790 (1-9)
Type: статьи в журналах
Date: 2016
Description: Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an ... More
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи в журналах
Date: 2016
Description: Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons ... More
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи в журналах
Date: 2016
Description: Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol ... More
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description: By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence ... More
Source: Nano research. 2016. Vol. 9, № 4. P. 1032-1042
Type: статьи в журналах
Date: 2016
Description: Bismuth telluride (Bi2Te3) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the ... More
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