Электронная библиотека (репозиторий) Томского государственного университета
Ernst, Arthur

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Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description: Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) ... More
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description: A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil ... More
Source: Physical Review B. 2014. Vol. 89, Issue 16. P. 165202-1-165202-7
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description: ABSTRACT: The ability to engineer an electronic band
Source: Physical Review Letters. 2013. Vol. 110, № 12. P. 129701-1
Type: статьи в журналах
Date: 2013
Source: Physical Review Letters. 2012. Vol. 108, № 20. P. 206801-1-206801-5
Type: статьи в журналах
Date: 2012
Source: Physical Review B. 2012. Vol. 86, № 18. P. 184418-1-184418-7
Type: статьи в журналах
Date: 2012
Source: Physical Review Letters. 2012. Vol. 109, № 7. P. 076801-1-076801-5
Type: статьи в журналах
Date: 2012
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