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Authors:
Krishtopenko, Sergey S. |
Grabecki, Grzegorz |
Jouault, Benoit |
Consejo, Christophe |
Desrat, Wilfried |
Kadykov, Alexander M. |
Spirin, Kirill E. |
Gavrilenko, Vladimir I. |
Mikhailov, Nikolay N. |
Dvoretsky, Sergei A. |
But, Dmytro B. |
Teppe, Frederic |
Wróbel, Jerzy |
Cywiński, Grzegorz |
Kret, Sławomir |
Dietl, Tomasz |
Knap, Wojciech |
Yahniuk, Ivan |
Majewicz, Magdalena
Source: npj Quantum materials. 2019. Vol. 4. P. 13 (1-8)
Type: статьи в журналах
Date: 2019
Description:
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at the critical thickness dc, corresponding to the band inversion and topological phase transition. The
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Authors:
Viti, Leonardo |
Coquillat, Dominique |
Politano, Antonio |
Kokh, Konstantin A. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Tereshchenko, Oleg E. |
Knap, Wojciech |
Chulkov, Evgueni V. |
Vitiello, Miriam S.
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи в журналах
Date: 2016
Description:
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons
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