Электронная библиотека (репозиторий) Томского государственного университета
Chulkov, Evgueni V.

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Source: Nano research. 2016. Vol. 9, № 4. P. 1032-1042
Type: статьи в журналах
Date: 2016
Description: Bismuth telluride (Bi2Te3) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the ... More
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
Source: Physical Review B. 2016. Vol. 93, № 20. P. 205416-1-205416-21
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: This is part II in a series of two papers that introduce a general expression for the tracer diffusivity in complex, periodic energy landscapes with M distinct hop rates in one-, two-, and three-dimen ... More
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description: By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence ... More
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи, опубликованные в зарубежных изданиях
Date: 2016
Description: Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than ... More
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description: Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 21790 (1-9)
Type: статьи в журналах
Date: 2016
Description: Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an ... More
Source: Journal of experimental and theoretical physics. 2015. Vol. 121, № 3. P. 465-476
Type: статьи в журналах
Date: 2015
Description: Ab initio study of the adsorption, diffusion, and intercalation of alkali metal adatoms on the (0001) step surface of the topological insulator Bi2Se3 has been performed for the case of low coverage. ... More
Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи, опубликованные в зарубежных изданиях
Date: 2015
Description: A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil ... More
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи, опубликованные в рецензируемых научных журналах (ВАК)
Date: 2015
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d ... More
Source: Physical Review B. 2015. Vol. 92, № 16. P. 165309-1-165309-9
Type: статьи, опубликованные в зарубежных изданиях
Date: 2015
Description: We propose a way to break the time-reversal symmetry at the surface of a three-dimensional topological insulator that combines features of both surface magnetic doping and magnetic proximity effect. B ... More

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