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Source: Physical Review B. 2016. Vol. 93, № 20. P. 205416-1-205416-21
Type: статьи в журналах
Date: 2016
Description:
This is part II in a series of two papers that introduce a general expression for the tracer diffusivity in complex, periodic energy landscapes with M distinct hop rates in one-, two-, and three-dimen
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description:
We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho
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Authors:
Güttler, M. |
Otrokov, Mikhail M. |
Kummer, K. |
Kliemt, K. |
Fedorov, Alexander V. |
Chikina, Alla |
Danzenbächer, S. |
Schulz, S. |
Chulkov, Evgueni V. |
Generalov, A. |
Koroteev, Yury M. |
Caroca-Canales, N. |
Shi, M. |
Radovic, M. |
Geibel, C. |
Laubschat, Clemens |
Krellner, C. |
Vyalikh, Denis V. |
Dudin, P. |
Kim, T. K. |
Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description:
Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than
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Authors:
Maaß, Henriette |
Seibel, Christoph |
Tusche, Christian |
Eremeev, Sergey V. |
Peixoto, Thiago R. F. |
Tereshchenko, Oleg E. |
Kokh, Konstantin A. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Bentmann, Hendrik |
Reinert, Friedrich
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the
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Authors:
Viti, Leonardo |
Coquillat, Dominique |
Politano, Antonio |
Kokh, Konstantin A. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Tereshchenko, Oleg E. |
Knap, Wojciech |
Chulkov, Evgueni V. |
Vitiello, Miriam S.
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи в журналах
Date: 2016
Description:
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 21790 (1-9)
Type: статьи в журналах
Date: 2016
Description:
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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Authors:
Caputo, Marco |
Babanly, Mahammad B. |
Otrokov, Mikhail M. |
Politano, Antonio |
Chulkov, Evgueni V. |
Arnau, Andrés |
Marinova, Vera |
Das, Pranab K. |
Fujii, Jun |
Vobornik, Ivana |
Perfetti, Luca |
Mugarza, Aitor |
Goldoni, Andrea |
Marsi, Marino |
Panighel, Mirko |
Khalil, Lama |
Lisi, Simone |
Di Santo, Giovanni |
Papalazarou, Evangelos |
Hruban, Andrzej |
Konczykowski, Marcin |
Krusin-Elbaum, Lia |
Aliev, Ziya S.
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи в журналах
Date: 2016
Description:
Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol
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Authors:
Papagno, Marco |
Fujii, Jun |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Mahatha, Sanjoy Kr. |
Vobornik, Ivana |
Mamedov, Nazim T. |
Pacilé, Daniela |
Chulkov, Evgueni V. |
Eremeev, Sergey V.
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description:
By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence
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Source: Nano research. 2016. Vol. 9, № 4. P. 1032-1042
Type: статьи в журналах
Date: 2016
Description:
Bismuth telluride (Bi2Te3) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the
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