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Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Authors:
Viti, Leonardo |
Coquillat, Dominique |
Politano, Antonio |
Kokh, Konstantin A. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Tereshchenko, Oleg E. |
Knap, Wojciech |
Chulkov, Evgueni V. |
Vitiello, Miriam S.
Source: Nano letters. 2016. Vol. 16, № 1. P. 80-87
Type: статьи в журналах
Date: 2016
Description:
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons
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Source: Physical Review B. 2012. Vol. 86, № 9. P. 094302-1-094302-8
Type: статьи в журналах
Date: 2012
Source: Physical Review B. 2012. Vol. 86, № 17. P. 174304-1-174304-12
Type: статьи в журналах
Date: 2012
Authors:
Ohtsubo, Y. |
Hajlaoui, M. |
Papalazarou, Evangelos |
Marsi, Marino |
Taleb-Ibrahimi, A. |
Faure, J. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Eremeev, Sergey V. |
Chulkov, Evgueni V. |
Perfetti, Luca |
Mauchain, J.
Source: Physical Review Letters. 2013. Vol. 111, № 12. P. 126603-1-126603-5
Type: статьи в журналах
Date: 2013