Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2014. Vol. 551. P. 92-97
Type: статьи в журналах
Date: 2014
Add   Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description: Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl ... More
Add   Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G.
Source: Journal of applied physics. 2022. Vol. 132, № 15. 155702-1-155702-16
Type: статьи в журналах
Date: 2022
Description: A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of f ... More
Add   Background donor concentration in HgCdTe
Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Add   Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2012. Vol. 522. P. 261-266
Type: статьи в журналах
Date: 2012
Add   Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Add   Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Ripenko, V. | Dvoretsky, Sergei A. | Grigoryev, Denis V. | Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e ... More
Add   Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air
Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Voytsekhovskiy, Alexander V.
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012025 (1-5)
Type: статьи в журналах
Date: 2015
Description: In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are di ... More
Add   Light emission from CdHgTe–based nanostructures
Authors: Mynbaev, K. D. | Bazhenov, N. L. | Izhnin, A. I. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Shilyaev, A. V.
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Add   Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description: The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s ... More
Add   Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigor'ev, D. V. | Lyapunov, D. V. | Nesmelov, Sergey N.
Source: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Type: статьи в журналах
Date: 2017
Description: Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–xCdxTe (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of ... More
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)
Type: статьи в журналах
Date: 2016
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014

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