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Description | Size | Format | ||
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Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators | 999 KB | Adobe Acrobat PDF | View Details | Download |
DOI Доступ к ресурсу на сайте издателя | 10.1016/j.tsf.2012.08.024 |