Электронная библиотека (репозиторий) Томского государственного университета

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Source: Distributed computer and communication networks : 18th International Conference, DCCN 2015, Moscow, Russia, October 19-22, 2015 : revised selected papers. [Cham], 2016. P. 314-322
Type: статьи в сборниках
Date: 2016
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 15-16
Type: статьи в сборниках
Date: 2015
Source: XVIII Simposium and School on High Resolusion Molecular Spectroscopy HighRus-2015, June 30 – July 4, 2015 : Abstracts of Reports. Tomsk, 2015. P. 20
Type: статьи в сборниках
Date: 2015
Source: Applied mechanics and materials. 2015. Vol. 698. P. 525-528
Type: статьи в журналах
Date: 2015
Source: XVIII Simposium and School on High Resolusion Molecular Spectroscopy HighRus-2015, June 30 – July 4, 2015 : Abstracts of Reports. Tomsk, 2015. P. 122
Type: статьи в сборниках
Date: 2015
Source: Russian physics journal. 2015. Vol. 57, № 12. P. 1676-1682
Type: статьи в журналах
Date: 2015
Description: A discrete pattern of the low-frequency acoustic emission spectrum under conditions of high-temperature plastic deformation of aluminum is analyzed. It is attributed to re-distribution of vibrational ... More
Source: Quantum electronics. 2015. Vol. 45, № 4. P. 283-300
Type: статьи в журналах
Date: 2015
Source: Advanced Materials Research. 2015. Vol. 1085. P. 265-269
Type: статьи в журналах
Date: 2015
Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015. Lviv, 2015. P. 364
Type: статьи в сборниках
Date: 2015
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Source: Advanced Materials Research. 2015. Vol. 1085. P. 229-232
Type: статьи в журналах
Date: 2015
Source: Materials characterization. 2015. Vol. 101. P. 173-179
Type: статьи в журналах
Date: 2015
Description: Electron backscatter diffraction was used to study grain structure development in heavily cryogenically-rolled Cu–30%Zn brass. The produced microstructure was found to be very inhomogeneous. At a rela ... More
Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More
Source: Advanced Materials Research. 2015. Vol. 1085. P. 209-213
Type: статьи в журналах
Date: 2015
Source: XVIII Simposium and School on High Resolusion Molecular Spectroscopy HighRus-2015, June 30 – July 4, 2015 : Abstracts of Reports. Tomsk, 2015. P. 77
Type: статьи в сборниках
Date: 2015

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