Электронная библиотека (репозиторий) Томского государственного университета

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Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S ... More
Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More
Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description: The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c ... More
Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337
Type: статьи в журналах
Date: 2023
Description: The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t ... More
Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)
Type: статьи в журналах
Date: 2023
Description: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o ... More
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 403-409
Type: статьи в журналах
Date: 2022
Description: Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing ... More
Source: Journal of communications technology and electronics. 2022. Vol. 67, № 3. P. 308-312
Type: статьи в журналах
Date: 2022
Description: Dark currents in medium-wave nBn structures based on HgCdTe grown with the aid of molecular beam epitaxy on the (013) GaAs substrates are studied. The passivation of the surface of the side walls of t ... More
Source: Journal of applied physics. 2022. Vol. 132, № 15. 155702-1-155702-16
Type: статьи в журналах
Date: 2022
Description: A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of f ... More
Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description: In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy ... More
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More
Source: Nanomaterials. 2022. Vol. 12, № 13. P. 2221 (1-21)
Type: статьи в журналах
Date: 2022
Description: Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, ... More
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Type: статьи в журналах
Date: 2022
Description: Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communicat ... More
Source: Russian physics journal. 2022. Vol. 64, № 9. P. 1583-1591
Type: статьи в журналах
Date: 2022
Description: Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional cryst ... More
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description: Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur ... More
Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description: The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier ... More

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