Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)
Type: статьи в журналах
Date: 2016
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Kurbanov, K. R. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Izhnin, Igor I. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Add   Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 421
Type: статьи в сборниках
Date: 2020
Add   Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Add   Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigor'ev, D. V. | Lyapunov, D. V. | Nesmelov, Sergey N.
Source: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Type: статьи в журналах
Date: 2017
Description: Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–xCdxTe (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of ... More
Add   Electrical characteristics of epitaxial MCT after As+ implantation
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Dvoretsky, Sergei A. | Smirnov, P. | Izhnin, Igor I.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati ... More
Add   The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air
Authors: Grigoryev, Denis V. | Voytsekhovskiy, Alexander V. | Tarasenko, Viktor Fedotovich | Ripenko, V. S. | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Ermachenkov, P. A.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 349
Type: статьи в сборниках
Date: 2018
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Add   Single-photon avalanche diode detectors based on group IV nanostructures
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Douhan, Rahaf M. H. | Dirko, Vladimir V. | Fitsych, Olena I.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 417
Type: статьи в сборниках
Date: 2020
Add   Accumulation of arsenic implantation‑induced donor defects in Hg0.7Cd0.3Te heteroepitaxial structures
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew | Jakiela, Rafal
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description: Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur ... More
Add   Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation
Authors: Sredin, Victor G. | Voytsekhovskiy, Alexander V. | Melekhov, Andrey P. | Ramakoti, Ravi S.
Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstracts. Tomsk, 2020. P. 461
Type: статьи в сборниках
Date: 2020
Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. II. Discrete mobility spectrum analysis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description: The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c ... More
Add   Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots
Authors: Izhnin, Igor I. | Pishchagin, Anton A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Fitsych, Olena I.
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More
Add   Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 709-710
Type: статьи в сборниках
Date: 2015

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