Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

Add to Quick Collection   All 147 Results

Showing items 16 - 30 of 147.
Sort:
 Add All Items to Quick Collection
Add   An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Journal of electronic materials. 2021. Vol. 50, № 8. P. 4599-4605
Type: статьи в журналах
Date: 2021
Description: Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it ... More
Add   Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Korotaev, A. G. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Add   Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
Authors: Dvoretsky, Sergei A. | Mynbaev, Karim D. | Fitsych, Olena I. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Sheregii, E. | Izhnin, Igor I.
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Add   Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films
Authors: Romanov, I. V. | Dyagterenko, K. M. | Kopylova, Tatyana N. | Kokhanenko, Andrey P. | Nikonova, E. N. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Add   Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014
Add   Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More
Add   TEM studies of structural defects in HgTe/HgCdTe quantum wells
Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More
Add   Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Add   Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Lozovoy, Kirill A.
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Add   Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2014. Vol. 551. P. 92-97
Type: статьи в журналах
Date: 2014
Add   Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Thin solid films. 2012. Vol. 522. P. 261-266
Type: статьи в журналах
Date: 2012
Add   Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semicon­ductor sensing unit
Authors: Barko, A. V. | Levashkin, A. G. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 9-11
Type: статьи в сборниках
Date: 2016
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
Add   Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 285-296
Type: статьи в журналах
Date: 2015
Add   Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te
Authors: Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, J. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, Denis V. | Yakushev, Maxim V. | Izhnin, Igor I. | Fitsych, Olena I. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description: Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the ... More

Creator

Date

Subject

Resource Type

^