Электронная библиотека (репозиторий) Томского государственного университета
арсенид галлия

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Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356
Type: статьи в журналах
Date: 2022
Description: A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen ... More
Source: Sensors. 2021. Vol. 21, № 4. P. 1550 (1-22)
Type: статьи в журналах
Date: 2021
Description: Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01047 (1-7)
Type: статьи в журналах
Date: 2015
Description: High resistivity, chromium compensated gallium arsenide (HR-GaAs:Cr) has recently shown to be a promising sensor material for X-ray detectors due to its high resistivity, its fully active volume, the ... More
Source: IEEE transactions on medical imaging. 2015. Vol. 34, № 3. P. 707-715
Type: статьи в журналах
Date: 2015
Description: High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensu ... More
Source: International Workshop on Gallium Oxide and Related Materials 2015 (IWGO 2015), 3-6, November 2015, Kyoto University, Kyoto, Japan. Kyoto, 2015. P. 100-101
Type: статьи в сборниках
Date: 2015
Source: Journal of Physics: Conference Series. 2013. Vol. 425, № 6. P. 062015 (1-4)
Type: статьи в журналах
Date: 2013
Source: Journal of instrumentation : electronic journal. 2012. Vol. 7, № 11. P. 11022 (1-11)
Type: статьи в журналах
Date: 2012
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