Электронная библиотека (репозиторий) Томского государственного университета
арсенид галлия

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Add   Formation of dislocations in the process of impurity diffusion in GaAs
Authors: Khludkov, Stanislav S. | Prudaev, Ilya A. | Tolbanov, Oleg P. | Ivonin, Ivan V.
Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356
Type: статьи в журналах
Date: 2022
Description: A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen ... More
Add   Characterization of chromium compensated gaas sensors with the charge-integrating JUNGFRAU readout chip by means of a highly collimated pencil beam
Authors: Greiffenberg, Dominic | Andrä, Marie | Barten, Rebecca | Bergamaschi, Anna | Brückner, Martin | Busca, Paolo | Chiriotti, Sabina | Chsherbakov, Ivan | Dinapoli, Roberto | Fajardo, Pablo | Fröjdh, Erik | Hasanaj, Shqipe | Kozlowski, Pawel | López-Cuenca, Carlos | Lozinskaya, Anastassiya D. | Meyer, Markus | Mezza, Davide | Mozzanica, Aldo | Redford, Sophie | Ruat, Marie | Ruder, Christian | Schmitt, Bernd | Thattil, Dhanya | Tinti, Gemma | Tolbanov, Oleg P. | Tyazhev, Anton V. | Vetter, Seraphin | Zarubin, Andrei N. | Zhang, Jiaguo
Source: Sensors. 2021. Vol. 21, № 4. P. 1550 (1-22)
Type: статьи в журналах
Date: 2021
Description: Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × ... More
Add   Characterization of 4 inch GaAs:Cr wafers
Authors: Budnitsky, D. | Lozinskaya, A. D. | Kolesnikova, I. | Zarubin, A. N. | Shemeryankina, A. | Mikhailov, T. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Add   Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Add   Dependence of X-ray sensitivity of GaAs:Cr sensors on material of contacts
Authors: Lozinskaya, A. D. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Yaskevich, T. M. | Zarubin, A. N. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Add   Investigation of GaAs:Cr Timepix assemblies under high flux irradiation
Authors: Hamann, E. | Zuber, M. | Cecilia, A. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Procz, S. | Fauler, A. | Fiederle, M. | Baumbach, T. | Koenig, T.
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01047 (1-7)
Type: статьи в журналах
Date: 2015
Description: High resistivity, chromium compensated gallium arsenide (HR-GaAs:Cr) has recently shown to be a promising sensor material for X-ray detectors due to its high resistivity, its fully active volume, the ... More
Add   Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor
Authors: Hamann, E. | Zuber, M. | Cecilia, A. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Procz, S. | Fauler, A. | Baumbach, T. | Fiederle, M. | Koenig, T.
Source: IEEE transactions on medical imaging. 2015. Vol. 34, № 3. P. 707-715
Type: статьи в журналах
Date: 2015
Description: High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensu ... More
Add   Sensor properties of metal-Ga oxide-GaAs structures
Authors: Kalygina, V. M. | Prudaev, Ilya A. | Tolbanov, Oleg P. | Gaman, V. I.
Source: International Workshop on Gallium Oxide and Related Materials 2015 (IWGO 2015), 3-6, November 2015, Kyoto University, Kyoto, Japan. Kyoto, 2015. P. 100-101
Type: статьи в сборниках
Date: 2015
Add   Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging
Authors: Bell, Steven J. | Duarte, Diana D. | French, M. J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Lozinskaya, A. D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Veale, Matthew C.
Source: Nuclear instruments and methods in physics research A. 2014. Vol. 752. P. 6-14
Type: статьи в журналах
Date: 2014
Add   Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material
Authors: Cecilia, A. | Zwerger, A. | Fauler, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Shelkov, G. | Graafsma, H. | Baumbach, T. | Fiederle, M. | Hamann, E.
Source: Journal of Physics: Conference Series. 2013. Vol. 425, № 6. P. 062015 (1-4)
Type: статьи в журналах
Date: 2013
Add   Investigation of the radiation hardness of GaAs sensors in an electron beam
Authors: Bergholz, M. | Mokeev, D. | Novikov, Vladimir A. | Bernitt, P. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Afanaciev, K.
Source: Journal of instrumentation : electronic journal. 2012. Vol. 7, № 11. P. 11022 (1-11)
Type: статьи в журналах
Date: 2012
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