Электронная библиотека (репозиторий) Томского государственного университета
Novikov, Vladimir A.

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Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359
Type: статьи в журналах
Date: 2017
Description: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi ... More
Source: Microelectronic engineering. 2015. Vol. 133. P. 73-77
Type: статьи в журналах
Date: 2015
Description: Effect of charging of structural elements of a metal–semiconductor Au–n-GaAs contact on the behavior of the contact potential difference (CPD) and other properties of the contact is investigated by AF ... More
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Barnaul, 2015. P. 175-176
Type: статьи в сборниках
Date: 2015
Source: Опто-, наноэлектроника, нанотехнологии и микросистемы : труды 18-й Международной конференции. Ульяновск, 2015. С. 99
Type: статьи в сборниках
Date: 2015
Source: Journal of applied physics. 2014. Vol. 115, № 22. P. 224505-1-224505-8
Type: статьи в журналах
Date: 2014
Source: Journal of instrumentation : electronic journal. 2012. Vol. 7, № 11. P. 11022 (1-11)
Type: статьи в журналах
Date: 2012
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