Электронная библиотека (репозиторий) Томского государственного университета
Tolbanov, Oleg P.

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Source: Technical physics letters. 2018. Vol. 44, № 6. P. 465-468
Type: статьи в журналах
Date: 2018
Description: Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acce ... More
Source: Semiconductors. 2018. Vol. 52, № 2. P. 143-149
Type: статьи в журналах
Date: 2018
Description: The effect of annealing in argon at temperatures of Tan = 700–900°C on the I–V characteristics of metal–Ga2O3–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 p ... More
Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2177-2185
Type: статьи в журналах
Date: 2018
Description: An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and ex ... More
Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916
Type: статьи в журналах
Date: 2018
Description: The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the ... More
Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More
Source: Journal of optics. 2017. Vol. 19, № 11. P. 115503 (1-7)
Type: статьи в журналах
Date: 2017
Description: Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−x S x crystals with a relatively low (x = 0.04) and high (x = 0.29) content of s ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Source: Chinese journal of physics. 2017. Vol. 55, № 1. P. 59-63
Type: статьи в журналах
Date: 2017
Description: The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at tempe ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Source: Optics and spectroscopy. 2017. Vol. 123, № 6. P. 867-870
Type: статьи в журналах
Date: 2017
Description: The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga2O3 crystals excited with a runaway electron beam and an excilamp with a wavelength of 222 nm were investig ... More
Source: Materials research express. 2017. Vol. 4, № 10. P. 106201 (1-7)
Type: статьи в журналах
Date: 2017
Description: The terahertz dielectric properties of multiwalled carbon nanotube/polyethylene (MWCNT/PE) composites prepared in different ways and with various contents of carbon nanotubes have been measured by ter ... More
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 88-89
Type: статьи в сборниках
Date: 2016
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 90-91
Type: статьи в сборниках
Date: 2016
Source: XV Международная молодежная конференция по люминесценции и лазерной физике, село Аршан, Республика Бурятия, Россия, 18-24 июля 2016 г. : тезисы лекций и докладов. Иркутск, 2016. С. 7
Type: статьи в сборниках
Date: 2016
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