Электронная библиотека (репозиторий) Томского государственного университета
Zarubin, A. N.

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Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Source: Russian physics journal. 2015. Vol. 58, № 4. P. 562-566
Type: статьи в журналах
Date: 2015
Description: Terahertz transmission spectra of subwavelength split-ring resonator structures on ceramic substrates are investigated experimentally. For terahertz wave propagation along the ring resonators used as ... More
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 1. С. 455-456
Type: статьи в сборниках
Date: 2015
Source: Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Type: статьи в журналах
Date: 2015
Description: Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and ... More
Source: Semiconductors. 2012. Vol. 46, № 8. P. 1003-1007
Type: статьи в журналах
Date: 2012
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