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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kopyev, Viktor V. |
Nikolaev, Vladimir I. |
Butenko, Pavel N. |
Deng, Jinxiang |
Pechnikov, Aleksei I. |
Korusenko, Petr M. |
Koroleva, Aleksandra |
Zhizhin, Evgeniy V.
Source: Chemosensors. 2023. Vol. 11, № 6. P. 325 (1-15)
Type: статьи в журналах
Date: 2023
Description:
The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor p
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Authors:
Almaev, Aleksei V. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Chikiryaka, Andrei V. |
Yakovlev, Nikita N. |
Usseinov, Abay B. |
Karipbayev, Zhakyp T. |
Akilbekov, Abdirash T. |
Koishybayeva, Zhanymgul K. |
Popov, Anatoli I.
Source: Materials. 2023. Vol. 16, № 1. P. 342 (1-16)
Type: статьи в журналах
Date: 2023
Description:
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically
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Source: Physica status solidi B. 2023. Vol. 260, № 4. P. 2200446 (1-7)
Type: статьи в журналах
Date: 2023
Description:
The article reports investigations into the microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a re
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Authors:
Almaev, Aleksei V. |
Nikolaev, Vladimir I. |
Kopyev, Viktor V. |
Shapenkov, Sevastian |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Pechnikov, Aleksei I. |
Deng, Jinxiang |
Izaak, Tatyana I. |
Chikiryaka, Andrei V. |
Scheglov, Mikhail P. |
Zarichny, Anton
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description:
The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor
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Source: Technical physics letters. 2022. Vol. 48, № 11. P. 61-64
Type: статьи в журналах
Date: 2022
Description:
α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Zinoviev, Mikhail M. |
Yudin, Nikolay N. |
Podzyvalov, Sergey N. |
Erzakova, Nadezhda N. |
Chikiryaka, Andrei V. |
Shcheglov, Mikhail P. |
Baalbaki, Houssain A. |
Olshukov, Alexey S.
Source: Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Type: статьи в журналах
Date: 2022
Description:
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4
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Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
Type: статьи в журналах
Date: 2021
Description:
The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are
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Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description:
The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b
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