Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.

Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)

Type: статьи в журналах

Date: 2020

Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn

Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.

Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208

Type: статьи в журналах

Date: 2020

Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers

Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S.

Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871

Type: статьи в журналах

Date: 2020

Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More