Электронная библиотека (репозиторий) Томского государственного университета
топологические изоляторы

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Add   Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator
Authors: Menshov, V. N. | Eremeev, Sergey V. | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Tugushev, V. V.
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d ... More
Add   Universal properties of materials with Dirac dispersion relation of low-energy excitations
Authors: Protogenov, Alexander P. | Chulkov, Evgueni V.
Source: Semiconductors. 2015. Vol. 49, № 12. P. 1550-1556
Type: статьи в журналах
Date: 2015
Description: The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between ... More
Add   Engineering Near Surface Electron States in Three Dimensional Topological Insulators
Authors: Menshov, V. N. | Tugushev, V. V. | Chulkov, Evgueni V.
Source: Journal of experimental and theoretical physics letters. 2013. Vol. 98, № 10. P. 603-608
Type: статьи в журналах
Date: 2013
Add   Engineering near-surface electron states in three-dimensional topological insulators
Authors: Menshov, V. N. | Tugushev, V. V. | Chulkov, Evgueni V.
Source: Письма в журнал экспериментальной и теоретической физики. 2013. Т. 98, вып. 10. С. 676-681
Type: статьи в журналах
Date: 2013
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