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Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Korotaev, Alexander G. |
Voytsekhovskiy, Alexander V. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 378-
Type: статьи в сборниках
Date: 2021
Description:
We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV e
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Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Korotaev, Alexander G. |
Voytsekhovskiy, Alexander V. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 421
Type: статьи в сборниках
Date: 2020
Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Yakushev, Maxim V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Fitsych, Olena I. |
Kurbanov, Kurban R.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description:
Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi
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Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description:
In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati
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Authors:
Fitsych, Olena I. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Mynbaev, Karim D. |
Kurbanov, K. R. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Izhnin, Igor I. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description:
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Fitsych, Olena I. |
Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description:
Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl
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Authors:
Grigoryev, Denis V. |
Korotaev, A. G. |
Kokhanenko, Andrey P. |
Lozovoy, Kirill A. |
Izhnin, Igor I. |
Savytskyy, Hrygory V. |
Bonchyk, A. Yu. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Voytsekhovskiy, Alexander V. |
Varavin, Vasilii S. |
Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description:
In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method
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Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description:
This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan
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Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Fitsych, Olena I. |
Świątek, Zbigniew |
Jakiela, Rafal
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description:
Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur
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Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description:
The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c
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Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 417
Type: статьи в сборниках
Date: 2020
Authors:
Izhnin, Igor I. |
Syvorotka, I. I. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, O. I. |
Bonchyk, A. Yu. |
Savytskyy, H. V. |
Mynbaev, K. D. |
Varavin, V. S. |
Dvoretsky, Sergei A. |
Mikhailov, N. N. |
Voytsekhovskiy, Alexander V. |
Yakushev, M. V. |
Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description:
A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat
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Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description:
In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti
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