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Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description:
The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener
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Source: Journal of electronic materials. 2018. Vol. 47, № 5. P. 2694-2702
Type: статьи в журналах
Date: 2018
Description:
The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated
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Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description:
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten
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Source: Journal of physics and chemistry of solids. 2017. Vol. 102. P. 42-48
Type: статьи в журналах
Date: 2017
Description:
Admittance of MIS structures based on MBE n-Hg1-xCdxTe (x=0.22–0.23) with Al2O3 as insulator is experimentally investigated for the cases of the presence and absence of near-surface graded-gap layers
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Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description:
In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy
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Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description:
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013
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Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description:
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam
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Source: Russian physics journal. 2015. Vol. 58, № 4. P. 540-551
Type: статьи в журналах
Date: 2015
Description:
Capacitance-voltage characteristics (CV characteristics) of MIS structures based on graded-gap MBE Hg1–xCdxTe (x = 0.22–0.23) with a two-layer plasma-chemical insulator SiO2/Si3N4 are studied under va
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Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description:
Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap
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Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the
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Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)
Type: статьи в журналах
Date: 2023
Description:
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o
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Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description:
In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper
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Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description:
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description:
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye
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