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Source: Advanced Materials Research. 2014. Vol. 1040. P. 34-38
Type: статьи в журналах
Date: 2014
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Authors:
Izhnin, A. I. |
Mynbaev, Karim D. |
Bazhenov, N. L. |
Shilyaev, A. V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Fitsych, Olena I. |
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I.
Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394
Type: статьи в журналах
Date: 2013
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 164-173
Type: статьи в журналах
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description:
The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol
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Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description:
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/
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Authors:
Voytsekhovskiy, Alexander V. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Gorn, Dmitriy Igorevich |
Kashirskii, Danila E. |
Lozovoy, Kirill A. |
Dirko, Vladimir V. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Sidorov, Georgiy Yu.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 112-113
Type: статьи в сборниках
Date: 2021
Description:
One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been
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Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 739-740
Type: статьи в сборниках
Date: 2015
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)
Type: статьи в журналах
Date: 2015
Description:
This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur
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Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438
Type: статьи в журналах
Date: 2017
Description:
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t
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Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description:
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto
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Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description:
Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015
Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, G. V. |
Mynbaev, Karim D. |
Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description:
Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri
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