Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Nikiforov, Alexander I. | Pishchagin, Anton A.

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Add   Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots
Authors: Izhnin, Igor I. | Pishchagin, Anton A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Fitsych, Olena I.
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More
Add   Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
Authors: Pishchagin, Anton A. | Kokhanenko, Andrey P. | Serokhvostov, V. Yu. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Voytsekhovskiy, Alexander V.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener ... More
Add   Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
Authors: Pishchagin, Anton A. | Serokhvostov, V. Yu. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
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