Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Admittance investigation of MIS structures with GgTe-based single quantum wells
Authors: Izhnin, Igor I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolaj N. | Nesmelov, Sergey N.
Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum ... More
Add   Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air
Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Voytsekhovskiy, Alexander V.
Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : Abstracts. Tomsk, 2015. P. 209
Type: статьи в сборниках
Date: 2015
Add   Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337
Type: статьи в журналах
Date: 2023
Description: The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t ... More
Add   Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S ... More
Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Add   Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
Authors: Pishchagin, Anton A. | Kokhanenko, Andrey P. | Serokhvostov, V. Yu. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Voytsekhovskiy, Alexander V.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)
Type: статьи в журналах
Date: 2016
Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener ... More
Add   Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth
Authors: Lozovoy, Kirill A. | Dirko, Vladimir V. | Vinarskiy, Vladimir P | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Akimenko, Nataliya Yu.
Source: Russian physics journal. 2022. Vol. 64, № 9. P. 1583-1591
Type: статьи в журналах
Date: 2022
Description: Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional cryst ... More
Add   Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
Authors: Pishchagin, Anton A. | Serokhvostov, V. Yu. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48
Type: статьи в сборниках
Date: 2016
Add   Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Journal of electronic materials. 2018. Vol. 47, № 5. P. 2694-2702
Type: статьи в журналах
Date: 2018
Description: The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated ... More
Add   Generation of surface defects in epitaxial CdxHg1-xTe layers by soft X-ray radiation of laser plasma
Authors: Voytsekhovskiy, Alexander V. | Ananin, O. B. | Izhnin, Igor I. | Melekhov, A. P. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Sredin, V. G.
Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2197-2200
Type: статьи в журналах
Date: 2018
Description: The possibility is demonstrated of a selective action of soft X-ray radiation on atoms of an individual element on the surface of a crystal constructed of atoms of several chemical elements.
Add   High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system
Authors: Dirko, Vladimir V. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description: In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy ... More
Add   Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 44-
Type: статьи в сборниках
Date: 2021
Description: The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscr ... More
Add   Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Journal of physics and chemistry of solids. 2017. Vol. 102. P. 42-48
Type: статьи в журналах
Date: 2017
Description: Admittance of MIS structures based on MBE n-Hg1-xCdxTe (x=0.22–0.23) with Al2O3 as insulator is experimentally investigated for the cases of the presence and absence of near-surface graded-gap layers ... More
Add   Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Add   Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More

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