Электронная библиотека (репозиторий) Томского государственного университета
Chulkov, Evgueni V.

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Add   Quasiparticle band gap in the topological insulator Bi2Te3
Authors: Nechaev, Ilya A. | Chulkov, Evgueni V.
Source: Physical Review B. 2013. Vol. 88. P. 165135-1-165135-11
Type: статьи в журналах
Date: 2013
Add   Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5
Authors: Koroteev, Yury M. | Bihlmayer, G. | Chulkov, Evgueni V. | Silkin, I. V.
Source: Applied surface science. 2013. Vol. 267. P. 169-172
Type: статьи в журналах
Date: 2013
Add   Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4
Authors: Otto, S. | Hermann, V. | Fauster, Th. | Menshchikova, Tatiana V. | Eremeev, Sergey V. | Aliev, Ziya S. | Amiraslanov, Imamaddin R. | Babanly, Mahammad B. | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Niesner, D.
Source: Physical Review B. 2014. Vol. 89, № 8. P. 081404-1-081404-5
Type: статьи в журналах
Date: 2014
Add   Phonons in ultrathin Bi(111) films: Role of spin-orbit coupling in electron-phonon interaction
Authors: Benedek, G. | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Chis, V.
Source: Physical Review B. 2013. Vol. 87, № 7. P. 075412-1-075412-7
Type: статьи в журналах
Date: 2013
Add   Quantum-well states with image state character for Pb overlayers on Cu(III)
Authors: Zabala, N. | Silkin, V. M. | Chulkov, Evgueni V. | Borisov, Andreï G. | Zugarramurdi, A.
Source: Physical Review B. 2012. Vol. 86, № 7. P. 075434-1-075434-11
Type: статьи в журналах
Date: 2012
Add   Tuning the plasmon energy of palladium–hydrogen systems by varying the hydrogen concentration
Authors: Muino, R. Dıez | Chernov, I. P. | Chulkov, Evgueni V. | Echenique, Pedro Miguel | Silkin, V. M.
Source: Journal of physics: Condensed matter. 2012. Vol. 24, № 10. P. 104021 (1-5)
Type: статьи в журналах
Date: 2012
Add   Comparative study of vibrations in submonolayer structures of potassium on Pt(111)
Authors: Eremeev, Sergey V. | Borisova, S. D. | Chulkov, Evgueni V. | Rusina, G. G.
Source: Journal of physics: Condensed matter. 2012. Vol. 24, № 10. P. 104003 (1-6)
Type: статьи в журналах
Date: 2012
Add   Ideal two-dimensional electron systems with a giant rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides
Authors: Nechaev, Ilya A. | Koroteev, Yury M. | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Eremeev, Sergey V.
Source: Physical Review Letters. 2012. Vol. 108, № 24. P. 246802-1-246802-5
Type: статьи в журналах
Date: 2012
Add   Spin-texture inversion in the giant Rashba semiconductor BiTeI
Authors: Maaß, Henriette | Seibel, Christoph | Tusche, Christian | Eremeev, Sergey V. | Peixoto, Thiago R. F. | Tereshchenko, Oleg E. | Kokh, Konstantin A. | Chulkov, Evgueni V. | Kirschner, Jürgen | Bentmann, Hendrik | Reinert, Friedrich
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description: Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the ... More
Add   Self-consistent approach for spectral properties of single alkali adatoms on Cu(III)
Authors: Achilli, S. | Trioni, M. I. | Chulkov, Evgueni V.
Source: Physical Review B. 2012. Vol. 85, № 4. P. 045408-1- 045408-8
Type: статьи в журналах
Date: 2012
Add   Electronic and spin structure of a family of Sn-based ternary topological insulators
Authors: Vergniory, M. G. | Silkin, I. V. | Koroteev, Yury M. | Eremeev, Sergey V. | Chulkov, Evgueni V. | Menshchikova, Tatiana V.
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045134-1-045134-7
Type: статьи в журналах
Date: 2015
Description: We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the fram ... More
Add   Universal properties of materials with Dirac dispersion relation of low-energy excitations
Authors: Protogenov, Alexander P. | Chulkov, Evgueni V.
Source: Semiconductors. 2015. Vol. 49, № 12. P. 1550-1556
Type: статьи в журналах
Date: 2015
Description: The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between ... More
Add   Robust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2
Authors: Güttler, M. | Otrokov, Mikhail M. | Kummer, K. | Kliemt, K. | Fedorov, Alexander V. | Chikina, Alla | Danzenbächer, S. | Schulz, S. | Chulkov, Evgueni V. | Generalov, A. | Koroteev, Yury M. | Caroca-Canales, N. | Shi, M. | Radovic, M. | Geibel, C. | Laubschat, Clemens | Krellner, C. | Vyalikh, Denis V. | Dudin, P. | Kim, T. K. | Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description: Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than ... More
Add   Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6
Authors: Klimovskikh, Ilya I. | Eremeev, Sergey V. | Rybkina, A. A. | Rusinova, M. V. | Rybkin, Artem G. | Zhizhin, E. V. | Sánchez-Barriga, J. | Varykhalov, A. | Rusinov, I. P. | Chulkov, Evgueni V. | Kokh, Konstantin A. | Golyashov, V. A. | Kamyshlov, V. | Tereshchenko, Oleg E. | Shikin, A. M.
Source: Physical Review B. 2014. Vol. 89, № 12. P. 125416-1-125416-8
Type: статьи в журналах
Date: 2014
Add   Geometric and electronic structure of the Cs-doped Bi2Se3(0001) surface
Authors: Ernst, Arthur | Mohseni, Katayoon | Fulara, H. | Roy, S. | Castro, G. R. | Rubio-Zuazo, J. | Ryabishchenkova, Anastasiya G. | Kokh, Konstantin A. | Tereshchenko, Oleg E. | Otrokov, Mikhail M. | Aliev, Ziya S. | Babanly, Mahammad B. | Chulkov, Evgueni V. | Meyerheim, Holger L. | Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description: Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) ... More

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