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Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Source: Известия высших учебных заведений. Физика. 2017. Т. 60, № 2. С. 135-140
Type: статьи в журналах
Date: 2017
Description:
Проведены исследования роста соединений SiSn с содержанием Sn от 10 до 35 %. Изучена морфология и структура поверхности слоев SiSn, а также установлена кинетическая диаграмма морфологического состояни
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Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Lyapunov, D. V. |
Lozovoy, Kirill A. |
Tarasenko, Viktor Fedotovich |
Shulepov, Mikhail A. |
Erofeev, Mikhail V. |
Ripenko, V. |
Dvoretsky, Sergei A. |
Grigoryev, Denis V. |
Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description:
The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e
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Source: Известия высших учебных заведений. Физика. 2017. Т. 60, № 12/2. С. 198-201
Type: статьи в журналах
Date: 2017
Description:
Определены значения концентраций основных носителей заряда в приповерхностных варизонных слоях полупроводника из измерений адмиттанса МДП-структур на основе n ( p )-HgCdTe, выращенного методом молекул
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Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description:
In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati
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Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359
Type: статьи в журналах
Date: 2017
Description:
Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi
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Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)
Type: статьи в журналах
Date: 2017
Description:
The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves
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