Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Background donor concentration in HgCdTe
Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Add   Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
Authors: Syvorotka, I. I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Izhnin, Igor I.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Add   Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Ripenko, V. | Dvoretsky, Sergei A. | Grigoryev, Denis V. | Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e ... More
Add   Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs
Authors: Izhnin, A. I. | Mynbaev, Karim D. | Bazhenov, N. L. | Shilyaev, A. V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Izhnin, Igor I.
Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394
Type: статьи в журналах
Date: 2013
Add   Single element 2D materials and methods of their epitaxial synthesis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V. | Vinarskiy, V. P. | Fitsych, Olena I.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 43-
Type: статьи в сборниках
Date: 2021
Description: Graphene-like allotrope modifications of single elements, such as borophene (B), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosporene (P), arsenene (As), antimonene (Sb), bismuthene ... More
Add   GE/SI quantum dots formation by the method of molecular beam epitaxy
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Kalin, Eugeniy A. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 221-223
Type: статьи в журналах
Date: 2013
Add   Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2016. Vol. 59, № 7. P. 920-933
Type: статьи в журналах
Date: 2016
Description: A technique is proposed for the determining the parameters of the equivalent circuit elements in strong inversion mode using the measurement results of the admittance of MIS structures based on n-Hg0. ... More
Add   Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description: The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency ... More
Add   Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters
Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Kalin, Eugeniy A. | Nikiforov, Alexander I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 241-242
Type: статьи в журналах
Date: 2013
Add   Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe
Authors: Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M. | Nesmelov, Sergey N. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 164-173
Type: статьи в журналах
Date: 2015
Add   Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G.
Source: Journal of applied physics. 2022. Vol. 132, № 15. 155702-1-155702-16
Type: статьи в журналах
Date: 2022
Description: A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of f ... More
Add   Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description: The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in ... More
Add   Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 378-
Type: статьи в сборниках
Date: 2021
Description: We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV e ... More
Add   Analysis of the nBn-type barrier structures for infrared photodiode detectors
Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich
Source: Journal of communications technology and electronics. 2017. Vol. 62, № 3. P. 314-316
Type: статьи в журналах
Date: 2017
Description: Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches ... More
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of

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