Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N.

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Add   The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Add   Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More
Add   Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Add   Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, Denis V. | Fitsych, Olena I. | Kurbanov, Kurban R.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More
Add   The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air
Authors: Grigoryev, Denis V. | Voytsekhovskiy, Alexander V. | Tarasenko, Viktor Fedotovich | Ripenko, V. S. | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Ermachenkov, P. A.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 349
Type: статьи в сборниках
Date: 2018
Add   Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Sidorov, Georgiy Yu. | Varavin, Vasilii S. | Vasilev, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Add   Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V. | Voytsekhovskiy, Alexander V.
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Add   Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 378-
Type: статьи в сборниках
Date: 2021
Description: We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV e ... More
Add   Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Add   Ion implantation and ion milling in MBE Hg1-xCdxNe films
Authors: Voytsekhovskiy, Alexander V. | Grigoryev, Denis V. | Mikhailov, Nikolay N. | Talipov, Niyaz H. | Mynbaev, Karim D. | Izhnin, Igor I. | Fitsych, Olena I.
Source: Nuclear instruments and methods in physics research B. 2012. Vol. 272. P. 313-317
Type: статьи в журналах
Date: 2012
Add   Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Add   Accumulation of arsenic implantation‑induced donor defects in Hg0.7Cd0.3Te heteroepitaxial structures
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew | Jakiela, Rafal
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description: Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur ... More
Add   Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 3. P. 281-284
Type: статьи в журналах
Date: 2018
Description: The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 in ... More
Add   Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description: The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s ... More
Add   Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Korotaev, A. G. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
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