Электронная библиотека (репозиторий) Томского государственного университета
Scheglov, Mikhail P.

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Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description: The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor ... More
Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
Type: статьи в журналах
Date: 2022
Description: The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3 ... More
Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description: Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo ... More
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