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Authors:
Greiffenberg, Dominic |
Andrä, Marie |
Barten, Rebecca |
Bergamaschi, Anna |
Brückner, Martin |
Busca, Paolo |
Chiriotti, Sabina |
Chsherbakov, Ivan |
Dinapoli, Roberto |
Fajardo, Pablo |
Fröjdh, Erik |
Hasanaj, Shqipe |
Kozlowski, Pawel |
López-Cuenca, Carlos |
Lozinskaya, Anastassiya D. |
Meyer, Markus |
Mezza, Davide |
Mozzanica, Aldo |
Redford, Sophie |
Ruat, Marie |
Ruder, Christian |
Schmitt, Bernd |
Thattil, Dhanya |
Tinti, Gemma |
Tolbanov, Oleg P. |
Tyazhev, Anton V. |
Vetter, Seraphin |
Zarubin, Andrei N. |
Zhang, Jiaguo
Source: Sensors. 2021. Vol. 21, № 4. P. 1550 (1-22)
Type: статьи в журналах
Date: 2021
Description:
Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 ×
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Authors:
Abramowicz, H. |
Acosta, U. |
Altarelli, M. |
Aßmann, R. |
Bai, Z. |
Behnke, T. |
Benhammou, Y. |
Blackburn, T. |
Boogert, S. |
Borysov, O. |
Borysova, M. |
Brinkmann, R. |
Bruschi, M. |
Burkart, F. |
Büßer, K. |
Shaimerdenova, L. |
Skakunov, M. S. |
Tolbanov, Oleg P. |
Tyazhev, Anton V. |
Zarubin, Andrei N.
Source: The European physical journal: Special topics. 2021. Vol. 230, № 11. P. 2445-2560
Type: статьи в журналах
Date: 2021
Description:
This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a power
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Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 2. P. P02026 (1-8)
Type: статьи в журналах
Date: 2021
Description:
HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25oC, there may be benefits of running the
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Authors:
Boyko, I. |
Burian, P. |
Campbell, M. |
Chelkov, G. A. |
Cherepanova, E. |
Di Girolamo, B. |
Gongadze, A. |
Janecek, J. |
Kharchenko, D. |
Kruchonak, U. G. |
Lapkin, A. |
Mora Sierra, Y. |
Nessi, M. |
Pontecorvo, L. |
Pospisil, S. |
Rastorguev, D. |
Rozhkov, V. |
Smolyanskiy, P. I. |
Suk, M. |
Stekl, I. |
Tolbanov, Oleg P. |
Tyazhev, Anton V. |
Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 1. P. P01031 (1-13)
Type: статьи в журналах
Date: 2021
Description:
A network of ten GaAs:Cr semiconductor Timepix detectors with GaAs:Cr sensors was installed in the ATLAS cavern at CERN's LHC during the shutdown periods 2015–2016 and 2016–2017 in the framework of a
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Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description:
The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c
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Authors:
Wheater, R. M. |
Jowitt, L. |
Zarubin, A. N. |
Richards, S. |
Veale, Matthew C. |
Wilson, Matthew D. |
Fox, O. J. L. |
Sawhney, K. J. S. |
Lozinskaya, A. D. |
Shemeryankina, A. |
Tolbanov, Oleg P. |
Tyazhev, Anton V.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2021. Vol. 999. P. 165207 (1-7)
Type: статьи в журналах
Date: 2021
Description:
A newly supplied 80 × 80 chromium compensated GaAs sensor with a matrix of 80 × 80 pixels on a 250 m pixel pitch has been characterised utilising microbeam mapping techniques at the Diamond Light Sour
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