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Source: Crystals. 2023. Vol. 13, № 11. P. 1562 (1-18)
Type: статьи в журналах
Date: 2023
Description:
Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparen
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Source: Photonics. 2022. Vol. 9, № 11. P. 863 (1-14)
Type: статьи в журналах
Date: 2022
Description:
Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by
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Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description:
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub
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Authors:
Korotchenko, Zoya V. |
Kurasova, A. S. |
Sarkisov, Sergey Yu. |
Sarkisov, Yuri S. |
Chernyshov, A. I. |
Korolkov, I. V. |
Kuchumov, B. M. |
Saprykin, Anatoly I. |
Atuchin, Victor V. |
Bereznaya, Svetlana A.
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 191-195
Type: статьи в журналах
Date: 2018
Description:
A procedure for the synthesis of a CdSiP2 compound from the initial elementary components in a gradient thermal field has been developed. The phase and chemical composition of the synthesized and recr
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Source: Journal of optics. 2017. Vol. 19, № 11. P. 115503 (1-7)
Type: статьи в журналах
Date: 2017
Description:
Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−x S x crystals with a relatively low (x = 0.04) and high (x = 0.29) content of s
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