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Source: Двадцатая Всероссийская конференция студенческих научно-исследовательских инкубаторов, г. Томск, 2–5 мая 2023 г.. Томск, 2023. С. 159-161
Type: статьи в сборниках
Date: 2023
Description:
The results of the research of the gain for a series of silicon photomultipliers are presented. A model for research the characteristics of photodetectors in a temperature chamber was assembled. The a
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Source: Journal of Physics: Conference Series. 2021. Vol. 1862. P. 012012 (1-5)
Type: статьи в журналах
Date: 2021
Description:
The results of research of the electrophysical and frequency characteristics of the semiconductor structure of a Schottky diode based on gallium arsenide are presented. The diode structure was modelle
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Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. С. 59-63
Type: статьи в сборниках
Date: 2020
Description:
In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteri
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