Research of the gain of silicon photomultipliers in a temperature chamber at various voltages

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Title: Research of the gain of silicon photomultipliers in a temperature chamber at various voltages
Creator: Moskalenko, Victoriya D.
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Frolova, D. A.
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Pidotova, Diana A.
Date: 2023
Description: The results of the research of the gain for a series of silicon photomultipliers are presented. A model for research the characteristics of photodetectors in a temperature chamber was assembled. The amplification factors of the samples were determined at voltages 38 – 42 V and temperatures from –20 to +40 °C. The recommended operating conditions for photodetector samples were revealed.

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collection(s): Радиофизический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в сборниках
Source: Двадцатая Всероссийская конференция студенческих научно-исследовательских инкубаторов, г. Томск, 2–5 мая 2023 г.. Томск, 2023. С. 159-161
Language: eng

Created: 28-10-2024

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Радиофизический факультет Research of the gain of silicon photomultipliers in a temperature chamber at various voltages