Electrophysical characteristics of Sub-THz diode with Schottky barrier

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Electrophysical characteristics of Sub-THz diode with Schottky barrier	259 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1109/EDM49804.2020.9153468

Title: Electrophysical characteristics of Sub-THz diode with Schottky barrier
Creator: Moskalenko, Victoriya D.
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Badin, Alexander V.
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Pidotova, Diana A.
Date: 2020
DOI: 10.1109/EDM49804.2020.9153468
Description: In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115-257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.