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Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
Type: статьи в журналах
Date: 2025
Description:
Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of
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Source: Journal of physics D: Applied physics. 2020. Vol. 53, № 33. P. 335105 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Surface plasmon waves and Rayleigh anomaly are characteristic optical phenomena exhibited