Электронная библиотека (репозиторий) Томского государственного университета
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Add   Infrared photoresponse of GeSiSn p–i–n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers
Authors: Timofeev, Vyacheslav A. | Skvortsov, Ilya V. | Mashanov, Vladimir I. | Bloshkin, Aleksei A. | Loshkarev, Ivan D. | Kirienko, Victor V. | Zalyalov, T. M. | Lozovoy, Kirill A.
Source: Nanotechnology. 2025. Vol. 36, № 13. P. 135201 (1-10)
Type: статьи в журналах
Date: 2025
Description: Structural and photoelectric properties of p–i–n photodiodes based on GeSiSn/Si multiple quantum dots (QDs) both on Si and silicon-on-insulator substrates were investigated. Elastic strained state of ... More
Add   Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers
Authors: Nikiforov, Alexander I. | Tuktamyshev, Artur R. | Mashanov, Vladimir I. | Yesin, Michail Yu. | Bloshkin, Aleksei A. | Timofeev, Vyacheslav A.
Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description: The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the ... More
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