Электронная библиотека (репозиторий) Томского государственного университета
Chulkov, Evgueni V.

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Source: Международная конференция "Физическая мезомеханика. Материалы с многоуровневой иерархически организованной структурой и интеллектуальные производственные технологии", посвященная 90-летию со дня рождения основателя и первого директора ИФПМ СО РАН академика Виктора Евгеньевича Панина в рамках Международного междисциплинарного симпозиума "Иерархические материалы: разработка и приложения для новых технологий и надежных конструкций", 5-9 октября 2020 года, Томск, Россия : тезисы докладов. Томск, 2020. С. 482
Type: статьи в сборниках
Date: 2020
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045134-1-045134-7
Type: статьи в журналах
Date: 2015
Description: We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the fram ... More
Source: Physical Review B. 2018. Vol. 97, № 19. P. 195409-1-195409-8
Type: статьи в журналах
Date: 2018
Description: The effect of spin-orbit coupling on the electron-phonon interaction in a (4/3)-monolayer of Pb on Si(111) is investigated within the density-functional theory and linear-response approach in the mixe ... More
Source: Semiconductors. 2015. Vol. 49, № 12. P. 1550-1556
Type: статьи в журналах
Date: 2015
Description: The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between ... More
Source: Scientific Reports [Еlectronic resource]. 2015. Vol. 5. P. 12819 (1-8)
Type: статьи в журналах
Date: 2015
Description: Intriguing phenomena and novel physics predicted for two-dimensional (2D) systems formed by electrons in Dirac or Rashba states motivate an active search for new materials or combinations of the alrea ... More
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description: Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the ... More
Source: Physical Review B. 2012. Vol. 85, № 4. P. 045408-1- 045408-8
Type: статьи в журналах
Date: 2012
Source: Physical Review B. 2013. Vol. 88, № 3. P. 035449-1-035449-11
Type: статьи в журналах
Date: 2013
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description: Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) ... More
Source: Physical Review B. 2018. Vol. 98, № 7. P. 075111-1-075111-14
Type: статьи в журналах
Date: 2018
Description: Electron excitation spectra in Ti and Zr transition metals are calculated in the framework of time-dependent density functional theory. Several peaks found in the obtained loss functions are interpret ... More
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 12. P. 3127-3134
Type: статьи в журналах
Date: 2021
Description: Inelastic interactions of quantum systems with the environment usually wash coherent effects out. In the case of Friedel oscillations, the presence of disorder leads to a fast decay of the oscillation ... More
Source: Physical Review B. 2015. Vol. 91, № 24. P. 245123-1-245123-8
Type: статьи в журналах
Date: 2015
Description: We report first-principles GW results on the dispersion of the bulk band-gap edges in the three-dimensional topological insulator Sb2Te3. We find that, independently of the reference density-functiona ... More
Source: Applied surface science. 2013. Vol. 267. P. 1-3
Type: статьи в журналах
Date: 2013
Source: Physical Review Letters. 2013. Vol. 111, № 12. P. 126603-1-126603-5
Type: статьи в журналах
Date: 2013

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