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Authors:
Poelchen, Georg |
Rusinov, Igor P. |
Schulz, Susanne |
Güttler, Monika |
Mende, Max |
Generalov, Alexander |
Usachov, Dmitry Yu. |
Danzenbächer, Steffen |
Hellwig, Johannes |
Peters, Marius |
Kliemt, Kristin |
Kucherenko, Yuri |
Antonov, Victor N. |
Laubschat, Clemens |
Chulkov, Evgueni V. |
Ernst, Arthur |
Kummer, Kurt |
Krellner, Cornelius |
Vyalikh, Denis V.
Source: ACS Nano. 2022. Vol. 16, № 3. P. 3573-3581
Type: статьи в журналах
Date: 2022
Description:
The f-driven temperature scales at the surfaces of strongly correlated materials have increasingly come into the focus of research efforts. Here, we unveil the emergence of a two-dimensional Ce Kondo
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Source: Физическая мезомеханика материалов. Физические принципы формирования многоуровневой структуры и механизмы нелинейного поведения : международная конференция, 5-8 сентября 2022 г., Томск, Россия : тезисы докладов. Новосибирск, 2022. С. 524
Type: статьи в сборниках
Date: 2022
Source: Physical Review B. 2021. Vol. 103, № 23. P. 235142-1-235142-9
Type: статьи в журналах
Date: 2021
Description:
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in
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Authors:
Fedorov, Alexander V. |
Poelchen, Georg |
Eremeev, Sergey V. |
Schulz, Susanne |
Generalov, Alexander |
Polley, C. |
Laubschat, Clemens |
Kliemt, Kristin |
Kaya, M. |
Krellner, Cornelius |
Chulkov, Evgueni V. |
Kummer, Kurt |
Usachov, Dmitry Yu. |
Ernst, Arthur |
Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description:
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct
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Source: The journal of physical chemistry letters. 2021. Vol. 12, № 37. P. 9076-9085
Type: статьи в журналах
Date: 2021
Description:
The Jahn-Teller effect is a geometrical distortion which lowers the system symmetry and lifts orbital degeneracy in molecules and solids. It affects a wide range of properties, including magnetic and
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Authors:
Wimmer, Stefan |
Sánchez-Barriga, Jaime |
Küppers, Philipp |
Ney, Andreas |
Schierle, Enrico |
Freyse, Friedrich |
Caha, Ondre |
Michalička, Jan |
Liebmann, Marcus |
Primetzhofer, Daniel |
Hoffman, Martin |
Ernst, Arthur |
Otrokov, Mikhail M. |
Bihlmayer, Gustav |
Weschke, Eugen |
Lake, Bella |
Chulkov, Evgueni V. |
Morgenstern, Markus |
Bauer, Günther |
Springholz, Gunther |
Rader, Oliver
Source: Advanced materials. 2021. Vol. 33, № 42. P. 2102935 (1-11)
Type: статьи в журналах
Date: 2021
Description:
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high-precision metrology, edge channel spintronics, and topological qubits. The stable 2
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Authors:
Ye, Mao |
Kuroda, Kenta |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Jiang, Qi |
Ernst, Arthur |
Chulkov, Evgueni V. |
Nakatake, Masashi |
Arita, Masashi |
Okuda, Taichi |
Matsushita, Tomohiro |
Tóth, László |
Daimon, Hiroshi |
Shimada, Kenya |
Ueda, Yoshifumi |
Kimura, Akio
Source: The Journal of Physical Chemistry C. 2021. Vol. 125, № 3. P. 1784-1792
Type: статьи в журналах
Date: 2021
Description:
The electronic and atomic structures of topological insulator Bi2Se3, upon Ag atom deposition, have been investigated by combined experimental methods of scanning tunneling microscopy (STM), photoelec
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Authors:
Rybkina, Anna A. |
Otrokov, Mikhail M. |
Vilkov, Oleg Yu. |
Klimovskikh, Ilya I. |
Petukhov, Anatoly E. |
Filianina, Maria V. |
Voroshin, Vladimir Yu. |
Rusinov, Igor P. |
Ernst, Arthur |
Rybkin, Artem G. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Shikin, Alexander M.
Source: Nano letters. 2018. Vol. 18, № 3. P. 1564-1574
Type: статьи в журналах
Date: 2018
Description:
A rich class of spintronics-relevant phenomena require implementation of robust magnetism and/or strong spin-orbit coupling (SOC) to graphene, but both properties are completely alien to it. Here, we
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Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Authors:
Roy, Sumalay |
Mohseni, Katayoon |
Ernst, Arthur |
Otrokov, Mikhail M. |
Vergniory, M. G. |
Mussler, G. |
Kampmeier, J. |
Grützmacher, D. |
Tusche, C. |
Schneider, J. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review B. 2014. Vol. 90, № 15. P. 155456-1-155456-9
Type: статьи в журналах
Date: 2014
Authors:
Otrokov, Mikhail M. |
Thonig, D. |
Hoffmann, M. |
Maznichenko, I. V. |
Geilhufe, M. |
Zubizarreta, X. |
Ostanin, Sergey A. |
Marmodoro, A. |
Henk, Jurgen |
Hergert, W. |
Mertig, I. |
Chulkov, Evgueni V. |
Ernst, Arthur |
Vergniory, M. G.
Source: Physical Review B. 2014. Vol. 89, Issue 16. P. 165202-1-165202-7
Type: статьи в журналах
Date: 2014
Authors:
Roy, Sumalay |
Ernst, Arthur |
Mohseni, Katayoon |
Tusche, C. |
Vergniory, M. G. |
Menshchikova, Tatiana V. |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Schneider, J. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review Letters. 2014. Vol. 113, № 11. P. 116802-1-116802-5
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description:
ABSTRACT: The ability to engineer an electronic band