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Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description:
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten
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Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description:
The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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Source: Russian physics journal. 2015. Vol. 57, № 9. P. 1287-1293
Type: статьи в журналах
Date: 2015
Description:
Within the limits of a linear model based on processing of data of direct calibration measurements with semiconductor multisensors, a method of their calibration by standard levels of gas concentratio
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Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description:
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00
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Source: Semiconductors. 2015. Vol. 49, № 3. P. 298-304
Type: статьи в журналах
Date: 2015
Description:
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcog
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Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 2. P. 025801 (1-8)
Type: статьи в журналах
Date: 2015
Description:
The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show
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Source: Bulletin of the Lebedev Physics Institute. 2015. Vol. 42, № 4. P. 107-109
Type: статьи в журналах
Date: 2015
Description:
The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap ar
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 121
Type: статьи в сборниках
Date: 2015
Source: Фотоника-2015 : Российская конференция по актуальным проблемам полупроводниковой фотоэлектроники (с участием иностранных ученых), 12-16 октября 2015 г., Новосибирск : тезисы докладов. Новосибирск, 2015. С. 99
Type: статьи в сборниках
Date: 2015
Source: Известия высших учебных заведений. Физика. 2015. Т. 58, № 8/2. С. 271-273
Type: статьи в журналах
Date: 2015
Source: Перспективы развития фундаментальных наук : сборник научных трудов XII Международной конференции студентов и молодых ученых, 21-24 апреля 2015 г.. Томск, 2015. С. 413-415
Type: статьи в сборниках
Date: 2015
Source: Х Международная научно-техническая конференция "Вакуумная техника, материалы и технология" (Москва, КВЦ "Сокольники", 2015, 14-16 апреля). М., 2015. С. 238-242
Type: статьи в сборниках
Date: 2015
Source: Физика и техника полупроводников. 2015. Т. 49, вып. 10. С. 1351-1354
Type: статьи в журналах
Date: 2015
