Add to Quick Collection
All 4 Results
Showing items 1 - 4 of 4.
Add All Items to Quick Collection
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 02001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructure
... More
Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description:
Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons
... More
Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description:
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto
... More
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014