Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | полупроводники | 2015

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Add   Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Add   Effect of van der Waals interactions on the structural and binding properties of GaSe
Authors: Sarkisov, Sergey Yu. | Kosobutsky, Alexey V. | Shandakov, Sergey D.
Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description: The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method ... More
Add   Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Add   Increase in the sensitivity and selectivity of semiconductor gas sensors
Authors: Muksunov, Timur R. | Sevastyanov, E. Yu. | Shipilov, Sergey E. | Yakubov, Vladimir P. | Maksimova, N. K.
Source: Russian physics journal. 2015. Vol. 57, № 9. P. 1287-1293
Type: статьи в журналах
Date: 2015
Description: Within the limits of a linear model based on processing of data of direct calibration measurements with semiconductor multisensors, a method of their calibration by standard levels of gas concentratio ... More
Add   On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Add   Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Authors: Shpotyuk, O. | Shpotyuk, M. | Ingram, A. | Szatanik, R. | Kozyukhin, Sergey A.
Source: Semiconductors. 2015. Vol. 49, № 3. P. 298-304
Type: статьи в журналах
Date: 2015
Description: Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcog ... More
Add   Relaxation of highly excited carriers in wide-gap semiconductors
Authors: Tyuterev, Valeriy G. | Zhukov, V. P. | Echenique, Pedro Miguel | Chulkov, Evgueni V.
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 2. P. 025801 (1-8)
Type: статьи в журналах
Date: 2015
Description: The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show ... More
Add   Study of spectral characteristics of materials for IR lasers based on II-VI semiconductors doped with iron-group ions
Authors: Kurchatov, I. S. | Bundyuk, A. V. | Kazaryan, M. A. | Kustov, D. M. | Bulychev, N. A.
Source: Bulletin of the Lebedev Physics Institute. 2015. Vol. 42, № 4. P. 107-109
Type: статьи в журналах
Date: 2015
Description: The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap ar ... More
Add   Механизмы рекомбинации в структурах InGaN/GaN с квантовыми ямами при высоких уровнях возбуждения
Authors: Войцеховский, Александр Васильевич | Горн, Дмитрий Игоревич
Source: Известия высших учебных заведений. Физика. 2015. Т. 58, № 8/2. С. 271-273
Type: статьи в журналах
Date: 2015
Add   Уровень зарядовой нейтральности и электронные свойства межфазных границ в слоистом полупроводнике ε-GaSe
Authors: Брудный, Валентин Натанович | Саркисов, Сергей Юрьевич | Кособуцкий, Алексей Владимирович
Source: Физика и техника полупроводников. 2015. Т. 49, вып. 10. С. 1351-1354
Type: статьи в журналах
Date: 2015
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