Электронная библиотека (репозиторий) Томского государственного университета
2015

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Add   Atomic arrangement and electron band structure of Si(1 1 1)-ß-√3×√3-Bi reconstruction modified by alkali-metal adsorption: Ab initio study
Authors: Eremeev, Sergey V. | Gruznev, Dimitry V. | Zotov, Andrey V. | Saranin, Alexander A. | Chukurov, E. N.
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 30. P. 305003 (1-5)
Type: статьи в журналах
Date: 2015
Description: Using ab initio calculations, atomic structure and electronic properties of Si(1 1 1)$sqrt{3} imes sqrt{3}$ -Bi surface modified by adsorption of 1/3 monolayer of alkali metals, Li, Na, K, Rb and Cs, ... More
Add   Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation
Authors: Caffrey, Nuala M. | Yakimova, Rositsa | Abrikosov, Igor A. | Armiento, Rickard
Source: Physical Review B. 2015. Vol. 92. P. 081409-1-081409-5
Type: статьи в журналах
Date: 2015
Description: The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between th ... More
Add   Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Add   On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Add   On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level
Authors: Brudnyi, Valentin N. | Ermakov, V. S. | Kolin, N. G. | Korulin, A. V. | Boiko, V. M.
Source: Semiconductors. 2015. Vol. 49, № 6. P. 763-766
Type: статьи в журналах
Date: 2015
Description: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown ... More
Add   Structure and electronic properties of hollow-caged C60 fullerene-derived (MN4)nC6(10-n) (M = Zn, Mg, Fe, n=1-6) complexes
Authors: Pomogaev, Vladimir A. | Kuzubov, Alex A. | Artyukhov, Viktor Ya. | Avramov, Pavel V.
Source: International journal of quantum chemistry. 2015. Vol. 115, № 4. P. 239-244
Type: статьи в журналах
Date: 2015
Add   Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)
Authors: Klimovskikh, Ilya I. | Usachov, Dmitry Yu. | Rybkin, Artem G. | Tsirkin, Stepan S. | Filianina, M. V. | Bokai, K. | Chulkov, Evgueni V. | Shikin, A. M. | Vilkov, Oleg Yu.
Source: Physical Review B. 2015. Vol. 92, № 16. P. 165402-1-165402-7
Type: статьи в журналах
Date: 2015
Description: The modification of the graphene spin structure is of interest for novel possibilities of application of graphene in spintronics. The most exciting of them demand not only high value of spin-orbit spl ... More
Add   Уровень зарядовой нейтральности и электронные свойства межфазных границ в слоистом полупроводнике ε-GaSe
Authors: Брудный, Валентин Натанович | Саркисов, Сергей Юрьевич | Кособуцкий, Алексей Владимирович
Source: Физика и техника полупроводников. 2015. Т. 49, вып. 10. С. 1351-1354
Type: статьи в журналах
Date: 2015
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