Электронная библиотека (репозиторий) Томского государственного университета
Ermakov, V. S.

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Source: Semiconductor science and technology. 2018. Vol. 33, № 9. P. 095011 (1-8)
Type: статьи в журналах
Date: 2018
Description: The effects of fast neutron (up to 1.75 × 1020 f.n. cm–2) and fast plus thermal neutron (up to 3.5 × 1020 f.t.n. cm–2) irradiation on the electrical properties and crystal lattice of GaN films have be ... More
Source: Semiconductors. 2015. Vol. 49, № 6. P. 763-766
Type: статьи в журналах
Date: 2015
Description: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown ... More
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