Электронная библиотека (репозиторий) Томского государственного университета
молекулярно-лучевая эпитаксия | Nesmelov, Sergey N. | МДП-структуры

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Add   Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description: The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s ... More
Add   Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More
Add   The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Add   Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Add   Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Add   Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
Authors: Syvorotka, I. I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Izhnin, Igor I.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Add   Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Add   Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range
Authors: Kulchitsky, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description: Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013 ... More
Add   Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Sidorov, Georgiy Yu. | Varavin, Vasilii S. | Vasilev, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Add   Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigor'ev, D. V. | Lyapunov, D. V. | Nesmelov, Sergey N.
Source: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Type: статьи в журналах
Date: 2017
Description: Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–xCdxTe (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of ... More
Add   Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2016. Vol. 59, № 7. P. 920-933
Type: статьи в журналах
Date: 2016
Description: A technique is proposed for the determining the parameters of the equivalent circuit elements in strong inversion mode using the measurement results of the admittance of MIS structures based on n-Hg0. ... More
Add   Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 970-977
Type: статьи в журналах
Date: 2015
Description: The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencie ... More
Add   Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)
Type: статьи в журналах
Date: 2015
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More
Add   Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)
Type: статьи в журналах
Date: 2015
Description: This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur ... More
Add   Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 2. С. 739-740
Type: статьи в сборниках
Date: 2015
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