Электронная библиотека (репозиторий) Томского государственного университета
Laubschat, Clemens | Chulkov, Evgueni V.

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Source: Physical Review B. 2021. Vol. 103, № 3. P. 035123-1-035123-14
Type: статьи в журналах
Date: 2021
Description: We present a combined experimental and theoretical study of the two-dimensional electron states at the iridium-silicide surface of the antiferromagnet GdIr2Si2 above and below the Ned temperature. Usi ... More
Source: ACS Nano. 2022. Vol. 16, № 3. P. 3573-3581
Type: статьи в журналах
Date: 2022
Description: The f-driven temperature scales at the surfaces of strongly correlated materials have increasingly come into the focus of research efforts. Here, we unveil the emergence of a two-dimensional Ce Kondo ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description: Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than ... More
Source: npj Quantum materials. 2019. Vol. 4. P. 26 (1-8)
Type: статьи в журналах
Date: 2019
Description: The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctu ... More
Source: Nature communications. 2019. Vol. 10. P. 796 (1-7)
Type: статьи в журналах
Date: 2019
Description: Application of the Luttinger theorem to the Kondo lattice YbRh2Si2 suggests that its large 4f-derived Fermi surface (FS) in the paramagnetic (PM) regime should be similar in shape and volume to that o ... More
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description: Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e ... More
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description: With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom ... More
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description: Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct ... More
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