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Source: Photonics. 2023. Vol. 10, № 7. P. 827 (1-16)
Type: статьи в журналах
Date: 2023
Description:
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and
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Source: Infrared physics and technology. 2023. Vol. 133. P. 104858 (1-7)
Type: статьи в журналах
Date: 2023
Description:
This paper is devoted to single crystals and two-phase ceramics based on the TlBr0.46I0.54 – AgI, TlCl0.74Br0.26 – AgI, AgBr – AgI systems' properties study in the THz range of 0.3–30.0 THz. Plane-par
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Source: Photonics. 2022. Vol. 9, № 11. P. 863 (1-14)
Type: статьи в журналах
Date: 2022
Description:
Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by
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Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description:
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of
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Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description:
The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c
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Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description:
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub
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Source: Physics of the solid state. 2018. Vol. 60, № 9. P. 1686-1690
Type: статьи в журналах
Date: 2018
Description:
Using methods of the density functional theory, the electronic band structure of a hexagonal modification of the layered GaTe semiconductor has been calculated. The structural parameters of a bulk cry
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Authors:
Korotchenko, Zoya V. |
Kurasova, A. S. |
Sarkisov, Sergey Yu. |
Sarkisov, Yuri S. |
Chernyshov, A. I. |
Korolkov, I. V. |
Kuchumov, B. M. |
Saprykin, Anatoly I. |
Atuchin, Victor V. |
Bereznaya, Svetlana A.
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 191-195
Type: статьи в журналах
Date: 2018
Description:
A procedure for the synthesis of a CdSiP2 compound from the initial elementary components in a gradient thermal field has been developed. The phase and chemical composition of the synthesized and recr
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Source: Journal of optics. 2017. Vol. 19, № 11. P. 115503 (1-7)
Type: статьи в журналах
Date: 2017
Description:
Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−x S x crystals with a relatively low (x = 0.04) and high (x = 0.29) content of s
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Authors:
Dunaevskii, Grigory E. |
Sarkisov, Sergey Yu. |
Suslyaev, Valentin I. |
Tolbanov, Oleg P. |
Zhuravlev, Victor A. |
Sarkisov, Yuri S. |
Kuznetsov, Vladimir L. |
Moseenkov, Sergey I. |
Semikolenova, Nina V. |
Dorozhkin, Kirill V. |
Zakharov, Vladimir A. |
Atuchin, Victor V.
Source: Materials research express. 2017. Vol. 4, № 10. P. 106201 (1-7)
Type: статьи в журналах
Date: 2017
Description:
The terahertz dielectric properties of multiwalled carbon nanotube/polyethylene (MWCNT/PE) composites prepared in different ways and with various contents of carbon nanotubes have been measured by ter
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Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description:
The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor
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Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description:
The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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Source: Russian physics journal. 2015. Vol. 58, № 2. P. 192-197
Type: статьи в журналах
Date: 2015
Description:
The results of experiments on the generation of terahertz radiation in the nitride LED structures at optical excitation by ultrashort laser pulses are presented. The dependences of the emission spectr
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Source: Russian physics journal. 2015. Vol. 58, № 4. P. 562-566
Type: статьи в журналах
Date: 2015
Description:
Terahertz transmission spectra of subwavelength split-ring resonator structures on ceramic substrates are investigated experimentally. For terahertz wave propagation along the ring resonators used as
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